PART |
Description |
Maker |
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT25GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP60BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
APT80GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT80GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP90B |
MOSFET The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04 |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V㈢ MOSFET POWER MOS V? MOSFET
|
MICROSEMI[Microsemi Corporation]
|
APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT30GP60B |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|